Spectroscopic studies of the mechanism for hydrogen-induced exfoliation of InP

The motion and bonding configurations of hydrogen in InP are studied after proton implantation and subsequent annealing, using Fourier transform infrared (FTIR) spectroscopy. It is demonstrated that, as implanted, hydrogen is distributed predominantly in isolated pointlike configurations with a smaller concentration of extended defects with uncompensated dangling bonds. During annealing, the bonded hydrogen is released from point defects and is recaptured at the peak of the distribution by free internal surfaces in di-hydride configurations. At higher temperatures, immediately preceding exfoliation, rearrangement processes lead to the formation of hydrogen clusters and molecules. Reported results demonstrate that the exfoliation dynamics of hydrogen in InP and Si are markedly different, due to the higher mobility of hydrogen in InP and different implant-defect characteristics, leading to fundamental differences in the chemical mechanism for exfoliation

Role of hydrogen in hydrogen-induced layer exfoliation of germanium

The role of hydrogen in the exfoliation of Ge is studied using cross-sectional transmission electron microscopy, atomic force microscopy, and multiple-internal transmission mode Fourier-transform infrared absorption spectroscopy and compared with the mechanism in silicon. A qualitative model for the physical and chemical action of hydrogen in the exfoliation of these materials is presented, in which H-implantation creates damage states that store hydrogen and create nucleation sites for the formation of micro-cracks. These micro-cracks are chemically stabilized by hydrogen passivation, and upon annealing serve as collection points for molecular hydrogen. Upon further heating, the molecular hydrogen trapped in these cracks exerts pressure on the internal surfaces causing the cracks to extend and coalesce. When this process occurs in the presence of a handle substrate that provides rigidity to the thin film, the coalescence of these cracks leads to cooperative thin film exfoliation. In addition to clarifying the mechanism of H-induced exfoliation of single-crystal thin Ge films, the vibrational study helps to identify the states of hydrogen in heavily damaged Ge. Such information has practical importance for the optimization of H-induced layer transfer as a technological tool for materials integration with these materials systems

Nanoimaging of Organic Charge Retention Effects: Implications for Nonvolatile Memory, Neuromorphic Computing, and High Dielectric Breakdown Devices

While a large variety of organic and molecular materials have been found to exhibit charge memory effects, the underlying mechanism is not well-understood, which hinders rational device design. Here, we study the charge retention mechanism of a nanoscale memory system, an organic monolayer on a silicon substrate, with Au nanoparticles on top serving as the electrical contact. Combining scanning probe imaging/manipulation and density functional simulations, we observe stable charge retention effects in the system and attributed it to polaron effects at the amine functional groups. Our findings can pave the way for applications in nonvolatile memory, neuromorphic computing, and high dielectric breakdown devices

Surface Chemical Reactions at the Atomic Scale: Gas Reactions with Semiconductors Studied with Scanning Tunneling Microscopy

The vacuum tunneling microscope has been extensively utilized in the study of the surface atomic configuration of conducting materials. Analysis of features in both the tunneling images and in the tunnel junction I-V characteristic yields insight into a wide variety of processes occurring at surfaces. In the last few years, elementary chemical reactions occurring at surfaces have been examined in this manner, principally adsorption of simple gas species such as H2, O2, and NH3 on semiconductors and metals. Adsorption sites have been deduced from changes brought about in surface configuration subsequent to gas exposure. The relationship of these sites with one another and their evolution as a function of exposure has been utilized to constrain mechanisms for the adsorption process. More recently, work has been performed where the scanning tunneling microscope (STM) takes on an active role. Hydrogen terminated silicon surfaces have been prepared and imaged with the STM. The tunneling images and infrared absorption spectra showed that configurations of both the terraces and steps are radically changed due to hydrogen capping. Moreover, the low-energy high-current density electron source, which is formed by the STM tip, has been used to selectively desorb this species from the surface. This process results in configuration changes which are derived from both the desorption kinetics and the long-range configuration of the initial surface

Film structure of epitaxial graphene oxide on SiC: Insight on the relationship between interlayer spacing, water content, and intralayer structure

Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manageable chemical complexity, thereby opening opportunities to accelerate both fundamental understanding and technological applications of this form of graphene oxide films. Here, we investigate the vertical inter-layer structure of these ultra-thin oxide films. X-ray diffraction, atomic force microscopy, and IR experiments show that the multilayer films exhibit excellent inter-layer registry, little amount (<10%) of intercalated water, and unexpectedly large interlayer separations of about 9.35 {\AA}. Density functional theory calculations show that the apparent contradiction of "little water but large interlayer spacing in the graphene oxide films" can be explained by considering a multilayer film formed by carbon layers presenting, at the nanoscale, a non-homogenous oxidation, where non-oxidized and highly oxidized nano-domains coexist and where a few water molecules trapped between oxidized regions of the stacked layers are sufficient to account for the observed large inter-layer separations. This work sheds light on both the vertical and intra-layer structure of graphene oxide films grown on silicon carbide, and more in general, it provides novel insight on the relationship between inter-layer spacing, water content, and structure of graphene/graphite oxide materials.Comment: 23 pages, 4 figure

Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing

Diffusion of indium through HfO2 after post deposition annealing in N-2 or forming gas environments is observed in HfO2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 degrees C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance. (C) 2014 AIP Publishing LLC

Energy transfer from colloidal nanocrystals into Si substrates studied via photoluminescence photon counts and decay kinetics

We use time-resolved photoluminescence (PL) kinetics and PL intensity measurements to study the decay of photoexcitations in colloidal CdSe/ZnS nanocrystals grafted on SiO 2 − Si substrates with a wide range of the SiO 2 spacer layer thicknesses. The salient features of experimental observations are found to be in good agreement with theoretical expectations within the framework of modification of spontaneous decay of electric-dipole excitons by their environment. Analysis of the experimental data reveals that energy transfer (ET) from nanocrystals into Si is a major enabler of substantial variations in decay rates, where we quantitatively distinguish contributions from nonradiative and radiative ET channels. We demonstrate that time-resolved PL kinetics provides a more direct assessment of ET, while PL intensity measurements are also affected by the specifics of the generation and emission processes